A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
نویسندگان
چکیده
A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.
منابع مشابه
High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode
Introduction: The transimpedance amplifier (TIA) is widely used in optical receiver circuits. The majority of CMOS TIA designs reported in the literature are intended for high speed digital signal reception. The TIA reported in this Letter is optimised for low noise analogue optical signal detection, in a situation where a weak modulated optical signal is superimposed on a large DC background. ...
متن کاملA silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product.
We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is ac...
متن کاملElectrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode
This work presents a dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) technology. The evaluated structure can collect the photons impinging beneath the pixel guard ring, as well as the pixel active area. The fill factor of the SPAD increases from 12.5% to 42% in comparison with simi...
متن کاملDesign and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell
A solar cell is an electronic device which not only harvests photovoltaic effect but also transforms light energy into electricity. In photovoltaic phenomenon, a P-N junction is created to form an empty region. The presented paper aims at proposing a new highly efficient InGaN/Si double-junction solar cell structure. This cell is designed to be used in a real environmental situation, so only s...
متن کاملCMOS Photodetectors
The inclusion of cameras in everything from cell phones to pens to children’s’ toys is possible because of the low cost and low power consumption of the imaging arrays that form the core of the cameras. However, these arrays are low cost and low power because they are CMOS-based; this allows for the devices to be made with the same processes and facilities that are used to make memory and compu...
متن کامل